Electron-beam

Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either exposed or non-exposed regions of the resist by immersing it in a developer solution. This technique is used in semiconductor fabrication for circuit editing, direct write and photomask production.

History

Electron-beam lithography has its roots in the 1960s with the work of K. R. Shoulders and others. It was developed as a way to push past the limitations of photolithography, which is unable to produce the small features that e-beam lithography can.

Process

The process begins with the application of an electron-sensitive resist to a substrate. The electron beam is then scanned over the surface, changing the solubility of the resist and allowing for selective removal. The process can be used to create very small structures, such as those used in semiconductor fabrication.

Advantages and Disadvantages

E-beam lithography has the advantage of being able to create much smaller features than can be achieved with photolithography. However, it is a slower process and can be more expensive.

Applications

E-beam lithography is used in a variety of applications, including circuit editing, direct write, and photomask production. It is also used in research and development settings.

See also

• Photolithography
• Semiconductor fabrication
• Circuit editing
• Photomask

Electron-beam Resources
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